???? n -channel enhancement insulated gate bipolar transistor hgh2 5 n120 a applications ? induction heating and microwave oven ? soft switching applications features ? low saturation voltage, vce(on)(typ)=2.1v@vge=15v ? high input impedance ? field stop trench technology offer superior conduction and switching performances, ? high speed switchin g absolute maximum ratings symbol description ratings units v ces collector to emitter voltage 1200 v v ges gate to emitter voltage 30 v collector currenttc = 25 50 a i c collector currenttc = 100 25 a i cm (1) pulsed collector current 80 a i f diode continuous forward current tc = 100 15 a maximum power dissipationtc = 25 200 w p d maximum power dissipationtc = 100 80 w t j operating junction temperature -55+150 t stg storage temperature range -55+150 t l maximum lead temp. for soldering purposes, 1/8 from case for 5 seconds 300 notes: 1. repetitive rating: pulse width limited by maximum jun ction temperature. thermal characteristics symbol parameter typ. max. units r jc (igbt) thermal resistance, junction to case 0.44 /w r jc (diode) thermal resistance, junction to case 2.24 /w r ja thermal resistance, junction to ambient 40 /w 1Dgateg 2Dcollectorc 3Demittere to-3p
???? n -channel enhancement insulated gate bipolar transistor hgh2 5 n120 a electrical characteristics of the igbt tc25,unless otherwise noted symbol parameter test conditions min. typ. max. units off characteristics bv ces collector to emitter breakdown voltage vge = 0v, ic = 250 a 1200 v i ces collector cut-off current vce = 1200v, vge = 0v 250 a i ges g-e leakage current vge = 30 v, vce = 0v 250 na on characteristics v ge(th) g-e threshold voltage ic = 250a, vce = vge 3.0 6.5 v v ce(sat) collector to emitter saturation voltage ic = 20a, vge = 15v tc = 25 2.1 2.7 v dynamic characteristics c ies input capacitance 840 pf c oes output capacitance 130 pf c res reverse transfer capacitance vce = 25v, vge = 0v, f= 100khz 50 pf switching characteristics t d(on) turn-on delay time 40 ns t r rise time 70 ns t d(off) turn-off delay time 80 ns t f fall time 350 ns e on turn-on switching loss 0.9 mj e off turn-off switching loss 2.2 mj e ts total switching loss vcc = 600v, ic = 20a, rg = 28 ? , vge = 15v, inductive load, tc = 25 3.1 mj q g total gate charge 186 230 nc q ge gate to emitter charge 15 20 nc q gc gate to collector charge vce = 600v, ic = 20a, vge = 15v 79 110 nc electrical characteristics of the diode (tc = 25 unless otherwise noted) symbol parameter test conditions min. typ. max. units v fm diode forward voltage if = 15a 1.7 2.7 v t rr diode reverse recovery time 210 330 ns i rr diode peak reverse recovery current 27 40 a q rr diode reverse recovery charge ies =15a, di/dt =200a/s 2.8 6.6 c
???? n -channel enhancement insulated gate bipolar transistor hgh2 5 n120 a typical performance characteristics
???? n -channel enhancement insulated gate bipolar transistor hgh2 5 n120 a typical performance characteristics
???? n -channel enhancement insulated gate bipolar transistor hgh2 5 n120 a typical performance characteristics
???? n -channel enhancement insulated gate bipolar transistor hgh2 5 n120 a typical performance characteristics
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